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 1N5221A/B THRU 1N5281A/B
Features
* Standards zener voltage tolerance is 3/420%.Add suffix "A" for 3/410% tolerance and suffix "B" for 3/45% tolerance other tolerance, non standards and higher zener voltage upon request
0.5W SILICON PLANAR ZENER DIODES
DO-35(GLASS)
0.075(1.9) MAX. DIA.
1.083(27.5) MIN.
0.154(3.9) MAX.
Mechanical Data
* Case : DO-35 glass case * Polarity : Color band denotes cathode end * Weight : Approx. 0.13 gram
0.020(0.52) MAX. DIA. 1.083(27.5) MIN.
Dimensions in inches and (millimeters)
Absolute Maximum Ratings (Limiting Values)
(TA=25E )
Symbols Value
5001) 175 -65 to+200
Units
mW E E
Zener current see table "Characteristics" Power dissipation at TA=75E Junction Temperature Storage Temperature range 1) Valid provided that a distance of 8mm from case are kept at ambient temperature
Ptot TJ TSTG
Electrical Characteristics
(TA=25E )
Symbols Min. Typ. Max.
3001) 1.1
Units
E /W V
Thermal resistance junction to ambient Forward voltage at IF=200mA
ReJA
VF
1) Valid provided that a distance of 8mm from case are kept at ambient temperature
1N5221A/B THRU 1N5249A/B SILICON PLANAR ZENER DIODES
Zener Voltage range1) Maximum zener impedance1) Maximum Reverse Leakage Current IR2) at VR
mA i A <100 <100 <75 <75 <50 <25 <15 <10 2.0 2.0 3.0 3.5 0.25 4.0 5.0 6.0 3 6.5 6.5 7.0 8.0 <2 <1 <0.5 <600 8.4 9.1 9.9 10 11 <0.1 12 13 14 14 1.0 V
Temp Coefficient of zener voltage
Type
1N5221A/B 1N5222A/B 1N5223A/B 1N5224A/B 1N5225A/B 1N5226A/B 1N5227A/B 1N5228A/B 1N5229A/B 1N5230A/B 1N5231A/B 1N5232A/B 1N5233A/B 1N5234A/B 1N5235A/B 1N5236A/B 1N5237A/B 1N5238A/B 1N5239A/B 1N5240A/B 1N5241A/B 1N5242A/B 1N5243A/B 1N5244A/B 1N5245A/B 1N5246A/B 1N5247A/B 1N5248A/B 1N5249A/B
VZNOM3)
V 2.4 2.5 2.7 2.8 3.0 3.3 3.6 3.9 4.3 4.7 5.1 5.6 6.0 6.2 6.8 7.5 8.2 8.7 9.1 10 11 12 13 14 15 16 17 18 19
IzT
mA O
rZjt and rZjk at IZK
O <1200 <30 <1250 <1300 <1400 <29 <28 <24 <23 <22 <19 <17 <11 <7 <7 <5 <6 <8 <8 <10 <17 <22 <30 <1600 <1600 <1700 <1900 <2000 <1900 <1600 <1600 <1600 <1000 <750 <500 <500
TKVZ
%/K <-0.085 <-0.085 <-0.080 <-0.080 <-0.075 <-0.070 <-0.065 <-0.060 <+0.055 <+0.030 <+0.030 <+0.038 <+0.038 <+0.045 <+0.050 <+0.058 <+0.062 <+0.065 <+0.068 <+0.075 <+0.076 <+0.077 <+0.079 <+0.082 <+0.082 <+0.083 <+0.084 <+0.085 <+0.086
20
5
9.5 9.0 8.5 7.8 7.4 7.0 6.6
<13 <15 <16 <17 <19 <21 <23
1N5250A/B THRU 1N5281A/B SILICON PLANAR ZENER DIODES
Zener Voltage range1) Maximum zener impedance1) Maximum Reverse Leakage Current IR2) at VR
mA i A V 15 17 18 <600 19 21 21 23 <700 <700 <800 <900 <1000 <1100 <1300 <1400 <1400 <1600 <1700 <2000 <2200 <2300 ----------------------<0.1 0.25 25 27 30 33 36 39 43 46 47 52 56 62 68 69 75 83 90 98 105 113 120 127 135 142 150
Temp Coefficient of zener voltage
Type
1N5250A/B 1N5251A/B 1N5252A/B 1N5253A/B 1N5254A/B 1N5255A/B 1N5256A/B 1N5257A/B 1N5258A/B 1N5259A/B 1N5260A/B 1N5261A/B 1N5262A/B 1N5263A/B 1N5264A/B 1N5265A/B 1N5266A/B 1N5267A/B 1N5268A/B 1N5269A/B 1N5270A/B 1N5271A/B 1N5272A/B 1N5273A/B 1N5274A/B 1N5275A/B 1N5276A/B 1N5277A/B 1N5278A/B 1N5279A/B 1N5280A/B 1N5281A/B
VZNOM3)
V 20 22 24 25 27 28 30 33 36 39 43 47 51 56 60 62 68 75 82 87 91 100 110 120 130 140 150 160 170 180 190 200
IzT
mA 6.2 5.6 5.2 5.0 4.6 4.5 4.2 3.8 3.4 3.2 3.0 2.7 2.5 2.2 2.1 2.0 1.8 1.7 1.5 1.4 1.4 1.3 1.2 1.0 0.95 0.90 0.85 0.80 0.74 0.68 0.66 0.65 O <25 <29 <33 <35 <41 <44 <49 <58 <70 <80 <93 <105 <125 <150 <170 <185 <230 <270 <330 <370 <400 <500 <700 <950 <1100 <1300 <1500 <1700 <1900 <2200 <2400 <2500
rZjt and rZjk at IZK
O
TKVZ
%/K <-0.086 <-0.087 <-0.088 <-0.089 <-0.090 <-0.091 <-0.091 <-0.092 <+0.093 <+0.094 <+0.095 <+0.095 <+0.096 <+0.096 <+0.097 <+0.097 <+0.097 <+0.098 <+0.098 <+0.099 <+0.099 <+0.100 <+0.100 <+0.100 <+0.110 <+0.110 <+0.110 <+0.115 <+0.115 <+0.120 <+0.120 <+0.120
1) The zener impedance is derived from the 60Hz AC voltage which results when on AC current having an RMS value equal to 10% of the Zener current (IzT or IZK) is superimposed on IzT or IZK Zener impedance is measured at two points to insure a sharp knee on the breakdown curve and to eliminate unstable units. 2) Vaild provided that leads at a distance of 8mm from case are kept at ambient temperature. 3) Measured under thermal equilibrium and DC test conditions.
1N5221A/B THRU 1N5281A/B SILICON PLANAR ZENER DIODES
Admissible power dissipation versus ambient temperature (Valid provided that leads at a distance of 10mm from case are kept at ambient temperature)
mW 500
1N5225...
Ptot
400
300
200
100
0 0 100 200 E
Tamb


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